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1 doped polysilicon gate
затвор з легованого полікристалічного кремніюEnglish-Ukrainian dictionary of microelectronics > doped polysilicon gate
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2 doped-polysilicon diffusion
дифузія з легованого полікристалічного кремніюEnglish-Ukrainian dictionary of microelectronics > doped-polysilicon diffusion
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3 p+ doped polysilicon
полікристалічний кремній р+-типуEnglish-Ukrainian dictionary of microelectronics > p+ doped polysilicon
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4 polysilicon
полікристалічний кремній, полікремній (див. т-ж silicon) - p+ doped polysilicon
- self-aligned polysilicons
- silicided polysiliconEnglish-Ukrainian dictionary of microelectronics > polysilicon
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5 gate
1. ім.1)логічний елемент; вентиль; логічна схема2) затвор (напр. польового транзистора); керуючий електрод3) пост; робоче місце4) селекторний [стробуючий] імпульс, строб-імпульс2. дієсл. здійснювати селекцію в часі, стробувати - AND gate
- AND–NOR gate
- AND-NOT gate
- AND-OR gate
- back gate
- Boolean gate
- channelless sea gates
- closed-geometry gate
- coincidence gate
- control gate
- digital logic gate
- digital summation threshold logic gate
- discrete gate
- doped polysilicon gate
- double-input gate
- DSTL gate
- emitter-coupled logic gate
- emitter-coupled gate
- equivalent gate
- erase gate
- exclusive NOR gate
- exclusive OR gate
- expandable gate
- fan-in gate
- fan-out gate
- fault-free gate
- faulty gate
- finger gate
- floating gate
- functional gate
- IIL gate
- I2L gate
- imaging gate
- inclusive OR gate
- inspectation gate
- intrinsic gate
- inverting gate
- isolated gate
- Josephson-junction logic gate
- Josephson logic gate
- Josephson tunneling logic gate
- logic gate
- majority gate
- meander gate
- MOS gate
- MOSFET gate
- multiple-level logic gate
- multiple-level gate
- NAND gate
- negation gate
- negative gate
- negative AND gate
- nitride gate
- NOR gate
- NOT gate
- n+ poly gate
- offset gate
- OR gate
- OR–NOT gate
- polycrystalline silicon gate
- polysilicon gate
- process control gate
- QA gate
- quantum interference Joseph-son gate
- recessed gate
- refractory-metal gate
- replicate/annihilate gate
- resistive gate
- Scholtky-barriergate
- Scholtkygate
- Scholtky TTL gate
- sea gates
- self-aligned gate
- self-registered gate
- single-input gate
- single -logic level gate
- single level gate
- single-poly gate
- stacked gate
- storage gate
- transfer gate
- transistor gate
- variable threshold logic gate
- variable threshold gate
- V-groove MOS gate
- p-gate -
6 diffusion
1) дифузія 2) рідк. дифузійна область - diffusion from а planar source
- ampoule diffusion
- back diffusion
- base diffusion
- base-and-resistor diffusion
- blanket diffusion
- box diffusion
- B&R diffusion
- channel diffusion
- closed-tube diffusion
- collector reach-through diffusion
- contact diffusion
- cross diffusion
- doped-polysilicon diffusion
- double diffusion
- drain and source diffusion
- drive-in diffusion
- enhanced diffusion
- error-function diffusion
- floating diffusion
- gaseous diffusion
- gas-phase diffusion
- gas-source diffusion
- guarding diffusion
- in diffusion
- inlerfacial diffusion
- interstitial diffusion
- laser-assisted diffusion
- laser-enhanced diffusion
- lateral diffusion
- liquid-phase diffusion
- masked diffusion
- multiple diffusion
- n-type diffusion
- one-step diffusion
- open-tube diffusion
- out diffusion
- oxidation-enhanced diffusion
- oxide-masked diffusion
- pipe diffusion
- planar diffusion
- predeposition diffusion
- proton-enhanced diffusion
- p-type diffusion
- selective diffusion
- separation diffusion
- shallow diffusion
- sideways diffusion
- single diffusion
- solid-state diffusion
- solid diffusion
- substitutional diffusion
- substrate diffusion
- tail diffusion
- vapor-phasediffusion
- vapordiffusionEnglish-Ukrainian dictionary of microelectronics > diffusion
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7 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process -
8 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
9 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region
См. также в других словарях:
doped-polysilicon diffusion — difuzija iš legiruoto polikristalinio silicio statusas T sritis radioelektronika atitikmenys: angl. doped polysilicon diffusion vok. Diffusion aus dotiertem Polysilizium, f rus. диффузия из легированного поликристаллического кремния, f pranc.… … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… … Wikipedia
Crystalline silicon — is a material consisting of one or more small silicon crystals. Polycrystalline silicon Polycrystalline silicon (or polysilicon, poly Si, or simply poly in context) is a material consisting of multiple small silicon crystals.Polycrystalline… … Wikipedia
Diffusion aus dotiertem Polysilizium — difuzija iš legiruoto polikristalinio silicio statusas T sritis radioelektronika atitikmenys: angl. doped polysilicon diffusion vok. Diffusion aus dotiertem Polysilizium, f rus. диффузия из легированного поликристаллического кремния, f pranc.… … Radioelektronikos terminų žodynas
diffusion au polysilicium dopé — difuzija iš legiruoto polikristalinio silicio statusas T sritis radioelektronika atitikmenys: angl. doped polysilicon diffusion vok. Diffusion aus dotiertem Polysilizium, f rus. диффузия из легированного поликристаллического кремния, f pranc.… … Radioelektronikos terminų žodynas
difuzija iš legiruoto polikristalinio silicio — statusas T sritis radioelektronika atitikmenys: angl. doped polysilicon diffusion vok. Diffusion aus dotiertem Polysilizium, f rus. диффузия из легированного поликристаллического кремния, f pranc. diffusion au polysilicium dopé, f … Radioelektronikos terminų žodynas
диффузия из легированного поликристаллического кремния — difuzija iš legiruoto polikristalinio silicio statusas T sritis radioelektronika atitikmenys: angl. doped polysilicon diffusion vok. Diffusion aus dotiertem Polysilizium, f rus. диффузия из легированного поликристаллического кремния, f pranc.… … Radioelektronikos terminų žodynas
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
Charge-coupled device — A specially developed CCD used for ultraviolet imaging in a wire bonded package. A charge coupled device (CCD) is a device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated, for… … Wikipedia
Microelectromechanical systems — (MEMS) (also written as micro electro mechanical, MicroElectroMechanical or microelectronic and microelectromechanical systems) is the technology of very small mechanical devices driven by electricity; it merges at the nano scale into… … Wikipedia
